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US 8,895,412 B2Granted
Nano-structure manufacturing method using sacrificial etching mask
AssigneeKorea Institute of Science and Technology
InventorsSeung Kyu Ha, Su Youn Kim, Il Ki Han, Jin Dong Song, Won Jun Choi
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Abstract
Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.
Claims11
A nano-structure manufacturing method, comprising:
- forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order;
- thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated;
- and
- performing an etching process by using the aggregated quantum dots as a mask, wherein the aggregated quantum dots used as the mask are entirely removed during the etching process;
- and
- obtaining structures shaped similar to the aggregated quantum dots after etching.
3 more elements
Dependencies are inferred from the claim text.