Method for creating semiconductor junctions with reduced contact resistance
AssigneeEvident Technologies
InventorsClinton T. Ballinger, Susanthri Perera, Adam Z. Peng
Life of this patent
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Abstract
Embodiments of the invention relate generally to creating semiconductor junctions with reduced contact resistance. In one embodiment, the invention provides a method of forming a composition of material, the method comprising: providing at least two populations of semiconducting materials; layering the at least two populations of semiconducting materials to form at least two layers; and consolidating the at least two populations of semiconducting materials, wherein the consolidating creates an electrical connection between the at least two layers.
Claims10
A method of forming a composition of material, the method comprising:
- providing at least two populations of semiconducting materials, wherein each of the at least two populations of semiconducting materials are chosen from the group consisting of:
- semiconductor powders, semiconducting nanomaterials, and solid semiconductor materials;
- layering the at least two populations of semiconducting materials to form at least two layers, the layering comprising applying the at least two populations of semiconducting materials adjacent to one another and in alternating layers;
- and
- consolidating the at least two populations of semiconducting materials using at least one of heat and pressure, wherein the consolidating creates an electrical connection between the at least two alternating layers.
A method of forming a composition of material, the method comprising:
- providing at least two populations of semiconducting materials, wherein at least two populations of semiconducting materials includes a population of a P type semiconductor material and a population of an N type semiconductor material;
- layering the at least two populations of semiconducting materials to form at least two layers, the layering comprising applying the at least two populations of semiconducting materials adjacent to one another and in alternating layers;
- and
- consolidating the at least two populations of semiconducting materials using at least one of heat and pressure, wherein the consolidating creates an electrical connection between the at least two alternating layers.
A method of forming a composition of material, the method comprising:
- providing at least two populations of semiconducting materials;
- layering the at least two populations of semiconducting materials to form at least two layers, the layering comprising applying the at least two populations of semiconducting materials adjacent to one another and in alternating layers;
- and
- consolidating the at least two populations of semiconducting materials using at least one of heat and pressure, wherein the consolidating creates an electrical connection between the at least two alternating layers, wherein a single junction is created between the at least two alternating layers of the at least two populations of semiconducting materials.
A method of forming a composition of material, the method comprising:
- providing at least two populations of semiconducting materials;
- layering the at least two populations of semiconducting materials to form at least two layers, the layering comprising applying the at least two populations of semiconducting materials adjacent to one another and in alternating layers;
- and
- consolidating the at least two populations of semiconducting materials using at least one of heat and pressure, wherein the consolidating creates an electrical connection between the at least two alternating layers, wherein a plurality of junctions is created between the at least two alternating layers of the at least two populations of semiconducting materials.
Dependencies are inferred from the claim text.