Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
AssigneeTadahiro Ohmi
InventorsTadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori
Life of this patent
Estimating the term…
Abstract
A cause of deteriorating the hydrogen termination on the surface of a wafer is found to be water adsorbed on the surface. By exposing the wafer to an inert gas atmosphere containing an H2 gas so as to suppress the oxidation reaction due to the water, it is possible to improve the hydrogen termination on the wafer surface.
Claims31
A semiconductor device manufacturing method comprising:
- maintaining hydrogen termination by, after completion of a first step of hydrogen-terminating a surface of a semiconductor, shifting to a second step of exposing said semiconductor to an atmosphere of an inert gas containing an H2 gas, a volume concentration of the H2 gas in a mixed gas of the inert gas and the H2 gas being 20 ppm to 3%.
A semiconductor device manufacturing method, comprising:
- maintaining hydrogen termination by, after completion of a first step of hydrogen-terminating a surface of a semiconductor, shifting to a second step of exposing said semiconductor to an atmosphere of an inert gas containing an H2 gas, the number of H2 molecules being greater than that of O2 molecules in the atmosphere of the inert gas containing the H2 gas.
A semiconductor manufacturing apparatus wherein hydrogen termination is maintained by, after completion of a first step of hydrogen-terminating a surface of a semiconductor, shifting to a second step of exposing said semiconductor to an inert gas atmosphere containing an H2 gas, a volume concentration of the H2 gas in a mixed gas of the inert gas and the H2 gas being 20 ppm to 3%.
A semiconductor manufacturing apparatus comprising:
- maintaining hydrogen termination by, after completion of a first step of hydrogen-terminating a surface of a semiconductor, shifting to a second step of exposing said semiconductor to an inert gas atmosphere containing an H2 gas, the number of H2 molecules being greater than that of O2 molecules in the atmosphere of the inert gas containing the H2 gas.
Dependencies are inferred from the claim text.