Fin-type memory
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsEng Huat Toh, Elgin Quek, Shyue Seng Tan
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Abstract
Memory devices and methods for forming a device are disclosed. A substrate prepared with a lower electrode level with bottom electrodes is provided. Fin stack layers are formed on the lower electrode level. Spacers are formed on top of the fin stack layers. The spacers have a width which is less than a lithographic resolution. The fin stack layers are patterned using the spacers as a mask to form fin stacks. The fin stacks contact the bottom electrodes. An interlevel dielectric (ILD) layer is formed on the substrate. The ILD layer fills spaces around the fin stacks. An upper electrode level is formed on the ILD layer. The upper electrode level has top electrodes in contact with the fin stacks. The electrodes and fin stacks form fin-type memory cells.
Claims21
A method of forming a device comprising:
- providing a substrate prepared with a lower electrode level with at least one bottom electrode;
- forming fin stack layers on the lower electrode level, wherein the fin stack layers comprise a secondary fin body layer and a main fin body layer formed over and contacts the secondary fin body layer and the secondary fin body layer contacts the at lest one bottom electrode;
- forming spacers on top of and directly contacting a top surface of the main fin body layer, wherein the spacers have a width which is less than a lithographic resolution;
- patterning at least the main fin body layer using the spacers as a mask to form individual fin stacks;
- removing the spacers after patterning at least the main fin body layer;
- forming an interlevel dielectric (ILD) layer on the substrate, filling spaces around the fin stacks;
- and
- forming an upper electrode level on the ILD layer after removing the spacers, the upper electrode level having at least one top electrode in contact with the fin stacks, the electrodes and fin stacks form one or more fin-type memory cells.
A method of forming a device comprising:
- providing a substrate prepared with a lower electrode level with a bottom electrode;
- forming layers of a fin stack on the lower electrode level, wherein the fin stack layers comprise a secondary fin body layer and a main fin body layer formed over and contacts the secondary fin body layer and the secondary fin body layer contacts the at least one bottom electrode;
- forming a spacer on top of and directly contacting a top surface of main fin body layer, wherein the spacer has a width which is less than a lithographic resolution;
- patterning at least the main fin body layer using the spacer as a mask to form a fin stack;
- removing the spacers after patterning at least the main fin body layer;
- forming an interlevel dielectric (ILD) layer on the substrate, filling spaces around the fin stack;
- and
- forming an upper electrode level on the ILD layer after removing the spacers, the upper electrode level having a top electrode in contact with the fin stack, the electrodes and fin stack form a fin-type memory cell.
A method of forming a device comprising:
- providing a substrate prepared with a lower electrode level with at least one bottom electrode;
- forming fin stack layers on the lower electrode level, wherein the fin stack layers comprise a secondary fin body layer and a main fin body layer formed over the secondary fin body layer;
- forming spacers on top of the fin stack layers, wherein the spacers have a width which is less than a lithographic resolution;
- patterning at least one of the layers of the fin stack layers using the spacers as a mask to form fins, wherein the secondary fin body layer is a common secondary fin body contacting the at least one bottom electrode;
- forming an interlevel dielectric (ILD) layer on the substrate, filling spaces around the fin stacks;
- and
- forming an upper electrode level on the ILD layer, the upper electrode level having at least one top electrode in contact with the fin stacks, the electrodes and fin stacks form one or more fin-type memory cells.
Dependencies are inferred from the claim text.