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US 8,895,401 B2Granted
Method of forming a memory device incorporating a resistance variable chalcogenide element
AssigneeMicron Technology, Inc.
InventorKristy A. Campbell
Life of this patent
Estimating the term…
Abstract
A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.
Claims15
A method of forming a memory cell comprising a chalcogenide glass with the formula AxB100-x, the method comprising:
- providing a metal-chalcogenide material in contact with the chalcogenide glass;
- providing a metal material between said metal-chalcogenide material and a second electrode;
- providing a second chalcogenide glass material between said metal-chalcogenide material and said metal material;
- and
- applying a conditioning voltage that forms bonds between a component of the chalcogenide glass and a component of the metal-chalcogenide material, thereby forming a conducting channel within the chalcogenide glass, wherein the memory cell has a first memory state and a second memory state, and the conducting channel is present in the chalcogenide glass layer in both said first memory state and said second memory state.
2 more elements
A method of forming a memory device, comprising:
- providing a first electrode and a second electrode;
- providing metal-chalcogenide material between the first and second electrodes;
- providing chalcogenide glass between the first and second electrodes;
- further comprising providing a second chalcogenide glass between the metal-chalcogenide material and the metal material;
- and
- applying a conditioning voltage and thereby forming a conducting channel within the chalcogenide glass, the conducting channel comprising bonds between a component of the chalcogenide glass and a component of the metal chalcogenide material, wherein the memory device has a first memory state and a second memory state, and the conducting channel is present in the chalcogenide glass layer in both said first memory state and said second memory state.
3 more elements
Dependencies are inferred from the claim text.