Method for manufacturing double-gate structures
AssigneesCsmc Technologies Fab1 Co., Ltd., Csmc Technologies Fab2 Co., Ltd.
InventorLe Wang
Life of this patent
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Abstract
A method is provided for manufacturing a double-gate structure. The method includes providing a substrate and forming a first gate region on a surface of the substrate using a first gate layer. The method also includes forming a second gate layer on the surface of the substrate, wherein the second gate layer covers the first gate region, forming an etch-stop layer on the second gate layer, and forming a silicide layer on the etch-stop layer. The method also includes forming a second gate region, different from the first gate region, containing the second gate layer and the silicide layer without the etch-stop layer. Further, the etch-stop layer is arranged between the second gate layer and the silicide layer to facilitate even etching of the second gate layer around the first gate region.
Claims12
A method for manufacturing a double-gate structure, comprising:
- providing a substrate;
- forming a first gate region on a surface of the substrate using a first gate layer;
- forming a second gate layer on the surface of the substrate, wherein the second gate layer covers the first gate region;
- forming an etch-stop layer on the second gate layer;
- forming a silicide layer on the etch-stop layer;
- forming a second gate region, different from the first gate region, containing the second gate layer and the silicide layer without the etch-stop layer,
- wherein the etch-stop layer is arranged between the second gate layer and the silicide layer to facilitate even etching of the second gate layer around the first gate region.
Dependencies are inferred from the claim text.