Methods for forming thin film storage memory cells
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsDanny Pak-Chum Shum, Fook Hong Lee
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Abstract
Methods are provided for manufacturing a thin film storage memory cell. The method includes forming a long select gate on a substrate, and forming thin film storage crystals overlying the long select gate and the adjacent substrate. A left and right control gate are formed on opposite sides of the long select gate, and a long select gate center portion is removed to form a left select gate and a right select gate with a gap therebetween. A drain is formed in the substrate underlying the gap, and a left and right source are formed in the substrate aligned with the left and right control gate.
Claims21
A method of forming a thin film storage memory cell, the method comprising:
- forming a long select gate on a substrate;
- forming thin film storage crystals overlying the long select gate and the substrate adjacent to the long select gate;
- forming a left control gate and a right control gate on opposite sides of the long select gate;
- removing a long select gate center portion to form a left select gate and a right select gate, wherein the left select gate and the right select gate define a gap therebetween;
- forming a drain in the substrate directly underlying the gap;
- and
- forming a left source in the substrate aligned with the left control gate and a right source in the substrate aligned with the right control gate.
A method of forming a thin film storage memory cell, the method comprising:
- forming a gate dielectric overlying a substrate;
- forming a long select gate overlying the gate dielectric;
- forming a left control gate and a right control gate on opposite sides of the long select gate;
- forming a gap photoresist overlying the long select gate and the substrate adjacent to the long select gate;
- removing a long select gate center portion to form a left select gate and a right select gate defining a gap therebetween;
- and
- forming a drain in the substrate directly underlying the gap.
A method of forming a thin film storage memory cell, the method comprising:
- forming a gate dielectric overlying a substrate, wherein the gate dielectric comprises silicon oxide;
- forming a long select gate overlying the gate dielectric, where the long select gate comprises polysilicon;
- depositing thin film storage crystals overlying the long select gate and the substrate;
- forming a left control gate and a right control gate on opposite sides of the long select gate, wherein the left control gate and the right control gate have an approximately triangular shape and comprise polysilicon, wherein the thin film storage crystals are positioned between the left control gate and the long select gate, and the thin film storage crystals are positioned between the right control gate and the long select gate;
- removing a long select gate center portion to form a left select gate and a right select gate defining a gap therebetween;
- implanting ions into the substrate directly underlying the gap to form a drain;
- and
- implanting ions into the substrate aligned with the left control gate and the right control gate to form a left source and a right source.
Dependencies are inferred from the claim text.