Method of manufacturing semiconductor memory device
AssigneeSK hynix Inc.
InventorWon Ki Kim
Life of this patent
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Abstract
The present disclosure relates to a method of manufacturing a semiconductor memory device, the method including: forming isolation layers in trenches dividing active regions of a substrate; depositing a tunnel insulating layer and a charge storing layer on an entire structure including the isolation layers; forming mask patterns on the charge storing layer to cover the active regions and to expose the isolation layers; and etching the charge storing layer by using the mask patterns as an etch barrier, thereby forming charge storing layer patterns on the active regions.
Claims6
A method of manufacturing a semiconductor memory device, the method comprising:
- forming isolation layers in trenches dividing active regions of a substrate;
- depositing a tunnel insulating layer and a charge storing layer on an entire structure including the isolation layers;
- forming mask patterns on the charge storing layer to cover the active regions and expose the isolation layers;
- and
- etching the charge storing layer by using the mask patterns as an etch barrier, thereby forming charge storing layer patterns on the active regions,
- wherein the forming of the mask patterns comprises forming a mask layer on the charge storing layer, forming sacrificial patterns on the mask layer to cover odd numbered or even numbered isolation layers among the isolation layers, forming spacers on side walls of the sacrificial patterns, removing the sacrificial patterns, and etching the mask layer by using the spacers as an etch barrier.
Dependencies are inferred from the claim text.