Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment

A method of manufacturing a semiconductor device comprising the steps of:

• providing a plurality of grooves in a semiconductor substrate and forming a first insulating layer over the plurality of grooves and the semiconductor substrate;
• grinding the first insulating layer until a top surface of the semiconductor substrate is exposed and forming a second insulating layer for element division;
• and
• subjecting the top surface of the semiconductor substrate to a plasma treatment by supplying a first gas containing a rare gas, an oxygen gas, and a hydrogen gas, and supplying a second gas consisting of a rare gas and an oxygen gas,
• wherein the supply of the second gas is performed after the supply of the first gas, and whereby a third insulating layer is formed on the top surface of the semiconductor substrate, and
• wherein a silicon oxide layer is formed as the third insulating layer.

A method of manufacturing a nonvolatile semiconductor storage device comprising the steps of:

• forming a semiconductor layer over a substrate;
• subjecting the semiconductor layer to a plasma treatment by supplying a first gas containing a rare gas, an oxygen gas, and a hydrogen gas, and supplying a second gas consisting of a rare gas and an oxygen gas, wherein the supply of the second gas is performed after the supply of the first gas, and whereby a first insulating layer is formed on a surface of the semiconductor layer;
• forming a first gate electrode over the semiconductor layer with the first insulating layer therebetween;
• forming a second insulating layer over the first gate electrode;
• forming a second gate electrode over the first gate electrode with the second insulating layer therebetween;
• and
• forming an impurity region in the semiconductor layer by adding an impurity element using the second gate electrode as a mask,
• wherein a silicon oxide layer is formed as the first insulating layer.

A method of manufacturing a nonvolatile semiconductor storage device comprising the steps of:

• subjecting a top surface of a semiconductor substrate to a plasma treatment by supplying a first gas containing a rare gas, an oxygen gas, and a hydrogen gas, and supplying a second gas consisting of a rare gas and an oxygen gas, wherein the supply of the second gas is performed after the supply of the first gas, and whereby a first insulating layer is formed on the top surface of the semiconductor substrate;
• forming a first gate electrode over the semiconductor substrate with the first insulating layer therebetween;
• forming a second insulating layer over the first gate electrode;
• forming a second gate electrode over the first gate electrode with the second insulating layer therebetween;
• and
• forming an impurity region in the semiconductor substrate by adding an impurity element using the second gate electrode as a mask,
• wherein a silicon oxide layer is formed as the first insulating layer.

A method of manufacturing a nonvolatile semiconductor storage device comprising the steps of:

• providing a plurality of grooves in a semiconductor substrate and forming a first insulating layer in the plurality of grooves and over the semiconductor substrate;
• grinding the first insulating layer until a top surface of the semiconductor substrate is exposed and forming a second insulating layer for element division;
• subjecting the top surface of the semiconductor substrate to a plasma treatment by supplying a first gas containing a rare gas, an oxygen gas, and a hydrogen gas, and supplying a second gas consisting of a rare gas and an oxygen gas, wherein the supply of the second gas is performed after the supply of the first gas, and whereby a third insulating layer is formed on the top surface of the semiconductor substrate;
• forming a first gate electrode over the semiconductor substrate with the third insulating layer therebetween;
• forming a fourth insulating layer over the first gate electrode;
• forming a second gate electrode over the first gate electrode with the fourth insulating layer therebetween;
• and
• forming an impurity region in the semiconductor substrate by adding an impurity element using the second gate electrode as a mask,
• wherein a silicon oxide layer is formed as the third insulating layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• and
• subjecting a plasma treatment to the semiconductor layer by supplying a first gas containing a rare gas, a hydrogen gas, and an oxygen gas and supplying a second gas containing a rare gas, a hydrogen gas, and an oxygen gas,
• wherein the supply of the second gas is performed after the supply of the first gas,
• wherein an amount of the hydrogen gas of the second gas is less than an amount of the hydrogen gas of the first gas,
• whereby an insulating layer is formed on a surface of the semiconductor layer, and
• wherein a silicon oxide layer is formed as the insulating layer.

A method of manufacturing a semiconductor device comprising the step of:

• subjecting a top surface of a semiconductor substrate to a plasma treatment by supplying a first gas containing a rare gas, a hydrogen gas, and an oxygen gas, and supplying a second gas containing of a rare gas, a hydrogen gas, and an oxygen gas,
• wherein the supply of the second gas is performed after the supply of the first gas,
• wherein an amount of the hydrogen gas of the second gas is less than an amount of the hydrogen gas of the first gas, and whereby an insulating layer is formed on the top surface of the semiconductor substrate, and
• wherein a silicon oxide layer is formed as the insulating layer.

A method of manufacturing a semiconductor device comprising the steps of:

• providing a plurality of grooves in a semiconductor substrate and forming a first insulating layer over the plurality of grooves and the semiconductor substrate;
• grinding the first insulating layer until a top surface of the semiconductor substrate is exposed and forming a second insulating layer for element division;
• and
• subjecting the top surface of the semiconductor substrate to a plasma treatment by supplying a first gas containing a rare gas, a hydrogen gas, and an oxygen gas, and supplying a second gas containing a rare gas, a hydrogen gas, and an oxygen gas,
• wherein the supply of the second gas is performed after the supply of the first gas,
• wherein an amount of the hydrogen gas of the second gas is less than an amount of the hydrogen gas of the first gas,
• whereby a third insulating layer is formed on the top surface of the semiconductor substrate, and
• wherein a silicon oxide layer is formed as the third insulating layer.