Methods of forming semiconductor structures

A method of forming a semiconductor structure, the method comprising:

• forming a through-substrate-via (TSV) structure in a substrate;
• forming a conductive structure electrically connected to the TSV structure, wherein the conductive structure is wider than the TSV structure;
• forming a metal-insulator-metal (MIM) capacitor structure over the substrate;
• forming a first dual damascene structure over and in contact with the TSV structure, wherein the dual damascene structure includes a first via portion and a first trench portion, and the first via portion is electrically connected to the conductive structure;
• forming a first dielectric layer disposed around the first via portion of the first dual damascene structure;
• and
• forming a second dielectric layer disposed around the first trench portion of the first dual damascene, wherein the second dielectric layer is disposed over the MIM capacitor structure.

A method of forming a semiconductor structure, the method comprising:

• forming a through-substrate-via (TSV) structure in a substrate;
• forming a first etch stop layer over the TSV structure;
• forming a first dual damascene structure disposed over and in contact with the TSV structure, wherein the dual damascene structure includes a first via portion and a first trench portion;
• forming a first dielectric layer disposed around the first via portion of the dual damascene and in contact with the first etch stop layer;
• forming a second etch stop layer in contact with the first dielectric layer;
• forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer;
• and forming a second dielectric layer disposed around the first trench portion of the first dual damascene structure, wherein the second dielectric layer is disposed over the MIM capacitor structure.