Solid-state imaging device
AssigneeSony Corporation
InventorsNoriko Takagi, Hiroyuki Mori
Life of this patent
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Abstract
A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in a part of the field effect transistors is different from the thickness of gate insulating film in the other field effect transistors among the plurality of the field effect transistors.
Claims5
A method of manufacturing a solid-state imaging device including a unit pixel that has at least a photoelectric converting portion and a plurality of insulated-gate transistors, comprising:
- forming the unit pixel including a photoelectric converting portion, a readout transistor, a reset transistor, and an amplifier transistor which amplifies a photoelectric conversion signal;
- forming a gate insulating film for the amplifier transistor such that its thickness is smaller than a gate insulating film for the other transistors of the photoelectric converting portion.
Dependencies are inferred from the claim text.