US 8,895,374 B2 · Semiconductor field-effect transistor structure and method for manufacturing the same

Abstract

The present application discloses a semiconductor Field-Effect Transistor (FET) structure and a method for manufacturing the same, wherein the method comprises: forming a semiconductor substrate comprising an SOI structure having a body-contact hole; forming a fin on the SOI structure of the semiconductor substrate; forming a gate stack structure on top and side faces of the fin; forming source/drain structures in the fin on both sides of the gate stack structure; and performing metallization. The present invention makes use of traditional quasi-planar based top-down processes, thus the manufacturing process thereof becomes simple to implement; the present invention exhibits good compatibility with CMOS planar process and can be easily integrated; the present invention also is favorable for suppressing short channel effects desirably, and boosts MOSFETs to develop towards a trend of downscaling size.

Claims10

Dependent claims

A manufacturing method, comprising:

forming a dielectric layer on a semiconductor substrate;
performing lithography and etching the dielectric layer to form a dielectric layer island and a body-contact hole;
forming a layer of amorphous Si material on the dielectric layer island and in the body-contact hole;
transforming the amorphous Si material into a monocrystalline material and implementing chemical mechanical polish (CMP) to the same to form a semiconductor substrate comprising a SOI structure having the body-contact hole;
forming a fin on the SOI structure of the semiconductor substrate;
forming a gate stack structure on top and side faces of the fin;
forming source/drain structures in the fin on both sides of the gate stack structure;
and
performing metallization.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor field-effect transistor structure and method for manufacturing the same

Life of this patent

Semiconductor field-effect transistor structure and method for manufacturing the same

Life of this patent

Abstract

Claims10