Transistor employing vertically stacked self-aligned carbon nanotubes

A method of forming a structure comprising:

• forming a fin structure on a substrate, wherein said fin structure has a length less than that of the substrate in a lengthwise direction and a width less than that of the substrate in a widthwise direction, and said fin structure comprises at least one pair of layers, wherein each pair of layers within said at least one pair of layers includes a first isoelectric point material layer having a first isoelectric point and a second isoelectric point material layer having a second isoelectric point that is different from said first isoelectric point;
• and
• attaching carbon nanotubes to said at least one first isoelectric point material layer by immersing said fin structure in a carbon nanotube-including solution having a pH between said first isoelectric point and said second isoelectric point and including an ionic surfactant, wherein said carbon nanotubes are electrostatically attracted to said at least one first isoelectric point material layer, and are electrostatically repelled from said at least one second isoelectric point material layer.