Methods for manufacturing superjunction semiconductor device having a dielectric termination

A method of manufacturing a superjunction semiconductor device, the method comprising:

• (a) forming at least one column of a first conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface;
• (b) forming at least one column of a second conductivity type extending from the first main surface toward the second main surface, the at least one column of the second conductivity type having a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface;
• and
• (c) forming a termination structure proximate the second sidewall surface of the at least one column of the second conductivity type, the termination structure comprising a layer of dielectric of an effective thickness and consuming about 0% of a surface area of the first main surface, a first surface of the termination structure being proximate to the at least one column of the second conductivity type and an opposite second surface to the termination structure being in direct contact with a material that encapsulates the semiconductor substrate.