Integrated semiconductor device and wafer level method of fabricating the same

A method to fabricate a stacked semiconductor device, the method comprising:

• providing a first substrate having a first electrical device and a first bond pad over the first electrical device;
• depositing a first insulation layer over the first bond pad over the first substrate;
• forming a first recess in the first insulation layer, the first recess having a bottom surface lower than a bottom surface of the first bond pad;
• providing a second substrate having a second electrical device and a second bond pad over the second electrical device;
• depositing a second insulation layer over the second bond pad over the second substrate;
• forming a second recess in the second insulation layer to expose a portion of the second bond pad;
• bonding the first insulation layer to the second insulation layer with the first recess and the second recess aligned;
• and
• after the bonding, forming a through-substrate-via (“TSV”) from a surface of the first substrate opposite the first bond pad, through the first substrate to the first recess.

A method to fabricate a stacked semiconductor device, the method comprising:

• providing a first substrate having a first electrical device and a first bond pad over the first electrical device, the first electrical device being electrically connected to the first bond pad;
• providing a second substrate having a second electrical device and a second bond pad over the second electrical device, the second electrical device being electrically connected to the second bond pad;
• bonding the first and second substrates together;
• and
• after the bonding, forming a through-substrate-via (“TSV”) from a surface of the first substrate opposite the first bond pad, through the first substrate, and to the first bond pad before bonding the first and second substrates together:
• depositing a first insulation layer over the first bond pad over the first substrate;
• forming a first recess in the first insulation layer, the first recess having a bottom surface lower than a bottom surface of the first bond pad;
• depositing a second insulation layer over the second bond pad over the second substrate;
• and
• forming a second recess in the second insulation layer to expose a portion of the second bond pad,
• wherein the bonding the first and second substrates together results in the first recess and the second recess being substantially aligned.