Solid-state imaging device, manufacturing method for the same, and imaging apparatus
AssigneeSony Corporation
InventorMasaaki Takizawa
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes: a pixel section including, in a semiconductor substrate, plural photoelectric conversion sections that photoelectrically convert incident light to generate signal charges; metal wirings formed, on a first insulating film formed on the semiconductor substrate, above regions among the photoelectric conversion sections and above the periphery of the pixel section; a second insulating film formed on the first insulating film to cover the metal wirings; a first light shielding film formed on the second insulating film and having an opening above the pixel section; and a second light shielding film formed above the metal wirings above the pixel section and having thickness smaller than that of the first light shielding film.
Claims9
A manufacturing method for a solid-state imaging device comprising the steps of:
- forming, on a first insulating film that covers a pixel section having plural photoelectric conversion sections that are formed in a semiconductor substrate and photoelectrically convert incident light to generate signal charges, metal wirings above regions among the photoelectric conversion sections and above a periphery of the pixel section;
- forming a first light shielding film via a second insulating film that covers the metal wirings;
- forming an opening in the first light shielding film above the pixel section;
- forming a second light shielding film that has thickness smaller than that of the first light shielding film on the first light shielding film including the opening;
- and
- removing, while leaving the second light shielding film on the second insulating film above the metal wirings above the pixel section, the second light shielding film formed in other regions.
A manufacturing method for a solid-state imaging device comprising the steps of:
- forming, on a first insulating film that covers a pixel section having plural photoelectric conversion sections that are formed in a semiconductor substrate and photoelectrically convert incident light to generate signal charges, metal wirings above regions among the photoelectric conversion sections and above a periphery of the pixel section;
- forming a second light shielding film via a second insulating film that covers the metal wirings;
- removing, while leaving the second light shielding film on the second insulating film above the metal wirings above the pixel section, the second light shielding film formed in other regions;
- forming, on the second insulating film, a first light shielding film that covers the second light shielding film and has thickness larger than that of the second light shielding film;
- and
- forming an opening in the first light shielding film above the pixel section.
A manufacturing method for a solid-state imaging device comprising the steps of:
- forming, on a first insulating film that covers a pixel section having plural photoelectric conversion sections that are formed in a semiconductor substrate and photoelectrically convert incident light to generate signal charges, metal wirings above regions among the photoelectric conversion sections and above a periphery of the pixel section;
- forming a second light shielding film via a second insulating film that covers the metal wirings;
- removing, while leaving the second light shielding film above the metal wirings above the pixel section, the remaining second light shielding film above the pixel section to form an opening;
- forming, on the second insulating film, a first light shielding film that covers the second light shielding film;
- and
- forming an opening in the first light shielding film above the pixel section.
Dependencies are inferred from the claim text.