Method of manufacturing radiation detector
AssigneeShimadzu Corporation
InventorsSatoshi Tokuda, Toshinori Yoshimuta, Hiroyuki Kishihara, Masatomo Kaino, Akina Yoshimatsu, Takahiro Doki, Toshiyuki Sato
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Abstract
A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.
Claims16
A method of manufacturing a radiation detector, comprising:
- a charge blocking layer forming step of forming a charge blocking layer on a substrate;
- a CdTe-layer forming step of forming a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film;
- and
- a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon at a temperature and for a period of time to assure that the CdTe-layer has physical property of an n-type semiconductor layer.
A method of manufacturing a radiation detector, comprising:
- forming a conversion module for receiving radiation and converting the received radiation received into charges;
- forming an active matrix substrate for collecting the charges from the conversion module in order to generate an image based on the received radiation, wherein
- the conversion module forming step includes:
- a charge blocking layer forming step of forming a charge blocking layer on a substrate;
- a CdTe-layer forming step of forming a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film;
- and
- a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon at a temperature and for a period of time to assure that the CdTe-layer has physical property of an n-type semiconductor layer.
Dependencies are inferred from the claim text.