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US 8,895,337 B1Granted
Method of fabricating vertically aligned group III-V nanowires
AssigneeSandia Corporation
InventorsGeorge T. Wang, Qiming Li
Life of this patent
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Abstract
A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.
Claims34
A method of fabricating vertically aligned Group III-nitride nanowires, comprising:
- providing a c-plane Group III-nitride substrate, or at least one c-plane Group III-nitride layer on a growth substrate;
- coating the top surface of the c-plane Group III-nitride substrate or the at least one c-plane Group III-nitride layer with an etch mask;
- anisotropically etching the c-plane Group III-nitride substrate or the at least one c-plane Group III-nitride layer through the etch mask to provide an array of c-axis oriented nanowires;
- and
- selectively wet etching the sidewalls of the c-axis oriented nanowires to remove anisotropic etch damage and provide an array of vertically aligned Group III-nitride nanowires.
2 more elements
A method of fabricating vertically aligned Group III-nitride nanowires, comprising:
- providing at least one Group III-nitride layer on a growth substrate;
- coating the top surface of the at least one Group III-nitride layer with an etch mask;
- anisotropically etching the at least one Group III-nitride layer through the etch mask to provide an array of nanowires;
- and
- selectively wet etching the sidewalls of the nanowires to remove anisotropic etch damage and provide an array of vertically aligned Group III-nitride nanowires;
- wherein the at least one Group III-nitride layer comprises a planar heterostructure and wherein the planar heterostructure comprises a light-emitting diode, solar cell or laser structure.
3 more elements
Dependencies are inferred from the claim text.