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US 8,895,336 B2Granted
Method of manufacturing infrared light-emitting element
AssigneePanasonic Corporation
InventorsAkihiko Sagara, Miori Hiraiwa, Satoshi Shibata
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Abstract
To provide a method of manufacturing an infrared light-emitting element having a wavelength of 1.57 μm, including: forming a SiO2 film on a Si substrate containing C; and performing RTA treatment in an atmosphere containing oxygen, or implanting impurity ions therein and thereafter performing RTA treatment in an atmosphere containing oxygen, thereby forming C centers.
Claims12
A method of manufacturing an infrared light-emitting element comprising steps of;
- (a) preparing a Si substrate containing C in an amount of between 1×1015 cm−3 and 2×1018 cm−3;
- (b) forming a SiO2 film on a surface of the Si substrate;
- and
- (c) applying rapid thermal anneal (RTA) treatment to the Si substrate with the SiO2 film formed thereon in an atmosphere containing oxygen,
- wherein the RTA treatment is performed in the atmosphere containing oxygen and an oxygen concentration is between 5% and 40%.
2 more elements
A method of manufacturing an infrared light-emitting element, comprising the steps of;
- (a) preparing a Si substrate containing C in an amount of between 1×1015 cm−3 and 2×1018 cm−3;
- (b) forming a SiO2 film on the Si substrate;
- (d) implanting ions in the Si substrate with the SiO2 film formed thereon;
- and
- (c) applying rapid thermal anneal (RTA) treatment to the Si substrate with the ions implanted therein in an atmosphere containing oxygen,
- wherein the RTA treatment is performed in the atmosphere containing oxygen and an oxygen concentration is between 5% and 40%.
3 more elements
Dependencies are inferred from the claim text.