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US 8,895,335 B1Granted
Impurity-induced disorder in III-nitride materials and devices
AssigneeSandia Corporation
InventorsJonathan J. Wierer, Jr., Andrew A. Allerman
Life of this patent
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Abstract
A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.
Claims11
A method for impurity-induced layer disordering in III-nitride materials, comprising:
- growing a III-nitride heterostructure at a growth temperature chosen to prevent layer disordering
- and doping one or more of the heterostructure layers with an impurity during growth, and
- post-growth annealing the heterostructure at an annealing temperature, time, and carrier gas pressure that induces disorder of one or more the heterostructure layer interfaces.
Dependencies are inferred from the claim text.