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US 8,895,328 B2Granted
Fabrication method of light-emitting device
AssigneeEpistar Corporation
InventorsSheng Horng Yen, Yung Hsiang Lin, Ying Yong Su, Han Min Wu
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Abstract
A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.
Claims16
A fabrication method of a light-emitting device, comprising:
- providing a growth substrate;
- forming a protective layer on a first surface of the growth substrate;
- and
- forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer, wherein the thickness of the growth substrate is larger than the thickness of the protective layer and the thickness of the first semiconductor layer;
- forming a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer to form a semiconductor stack, wherein an electrical conductivity type of the first semiconductor layer is different from that of the second semiconductor layer;
- and removing the growth substrate from the semiconductor stack.
3 more elements
Dependencies are inferred from the claim text.