Method of forming a magnetoresistive random-access memory device

A method for forming MRAM (magnetoresistive random access memory) devices, comprising:

• forming a bottom electrode assembly, comprising:
• depositing a bottom electrode assembly layer over a substrate;
• forming a patterned mask over the bottom electrode assembly layer;
• etching the bottom electrode assembly layer to form the bottom electrode assembly with gaps;
• gap filling the gaps in the bottom electrode assembly;
• stripping the patterned mask over the bottom electrode assembly;
• and
• planarizing the bottom electrode assembly;
• forming a magnetic junction assembly, comprising
• depositing a magnetic junction assembly layer over the planarized bottom electrode assembly, wherein the depositing the magnetic junction assembly layer comprises:
• depositing a bottom magnetic layer over the bottom electrode assembly;
• depositing a tunnel oxide layer over the bottom magnetic layer;
• and
• depositing a top magnetic layer over the tunnel oxide layer;
• forming a patterned mask over the magnetic junction assembly layer;
• etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps;
• gap filling the magnetic junction assembly;
• stripping the patterned mask over the magnetic junction assembly;
• and
• planarizing the magnetic junction assembly;
• and
• forming a top electrode assembly, comprising
• depositing a top electrode assembly layer over the planarized magnetic junction assembly;
• forming a patterned mask over the top electrode assembly layer;
• etching the top electrode assembly layer to form the top electrode assembly with gaps;
• and
• gap filling the top electrode assembly.

A magnetoresistive random access memory device formed by the method, comprising:

• forming a bottom electrode assembly;
• forming a magnetic junction assembly, wherein the forming the magnetic junction assembly comprises:
• depositing a magnetic junction assembly layer over the bottom electrode assembly, wherein the depositing the magnetic junction assembly layer comprises:
• depositing a bottom magnetic layer over the bottom electrode assembly;
• depositing a tunnel oxide layer over the bottom magnetic layer;
• and
• depositing a top magnetic layer over the tunnel oxide layer;
• forming a patterned mask over the magnetic junction assembly layer;
• etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps;
• gap filling the magnetic junction assembly;
• and
• planarizing the magnetic junction assembly;
• and
• forming a top electrode assembly.