Method for making semiconductor device having ferroelectric capacitor therein

A method for manufacturing a semiconductor device, comprising:

• forming a ferroelectric capacitor provided with a ferroelectric film above a semiconductor substrate;
• forming a wiring on and directly connected to an electrode of the ferroelectric capacitor;
• forming a silicon oxide film with a thickness of between 20 nm and 100 nm covering at least an upper surface of the wiring by sputtering method;
• and
• forming a first plasma oxide film over the silicon oxide film by plasma CVD method, a lower surface of the first plasma oxide film being in contact with an upper surface of the silicon oxide film;
• wherein the method further comprises forming an aluminum oxide film over and in contact with the first plasma oxide film.