Process for production of photoresist pattern
AssigneeNational University Corporation Hokkaido University
InventorsKosei Ueno, Hiroaki Misawa
Life of this patent
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Abstract
Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.
Claims5
A method for producing a photoresist pattern comprising:
- providing a photomask formed of a metal nanostructure for producing localized surface plasmon resonance, the metal nanostructure including a mask substrate having an irregular structure on a surface thereof and a metal film arranged on at least a protrusion of the irregular structure of the mask substrate;
- providing a photoresist film that is sensitive to light having a wavelength X, the photoresist being formed on a surface of a resist substrate;
- bringing the photomask into contact with the photoresist film;
- and
- transferring onto the photoresist film a pattern of the metal film of the photomask by generating a scattering component of light based on localized surface plasmon resonance at a surface of the metal film of the photomask by directing a light having a wavelength Y that is longer than wavelength X and 50 nm to 200 nm shorter than a peak wavelength of a plasmon resonance band of the metal nanostructure.
Dependencies are inferred from the claim text.