Method and system for forming a pattern using charged particle beam lithography with multiple exposure passes with different dosages
AssigneeD2S, Inc.
InventorsHarold Robert Zable, Akira Fujimura
Life of this patent
Estimating the term…
Abstract
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.
Claims29
A method for fracturing or mask data preparation or proximity effect correction for charged particle beam lithography of a surface comprising:
- setting a base dosage level for each of a plurality of exposure passes of a shaped beam charged particle beam system, wherein the base dosage levels for at least two of the exposure passes are different;
- and
- determining a plurality of shaped beam shots for each of the plurality of exposure passes, wherein each shaped beam shot comprises maintaining the shaped charged particle beam at a stationary position with respect to the surface while the surface is being exposed.
A method for forming a set of patterns on a surface using a shaped beam charged particle beam system comprising:
- a) setting a base dosage level for an exposure pass;
- b) exposing a plurality of shaped beam shots for the exposure pass using the set base dosage level, wherein during each shaped beam shot exposure the shaped charged particle beam remains stationary with respect to the surface;
- and
- c) repeating a) and b) for at least one additional exposure pass,
- wherein the sum of the pluralities of shaped beam shots for all of the exposure passes forms the set of patterns on the surface, and wherein the base dosage levels for at least two of the exposure passes are different.
A method for manufacturing an integrated circuit using an optical lithographic process, the optical lithographic process using a reticle, the method comprising:
- a) providing a shaped beam charged particle beam system;
- b) setting a base dosage level for an exposure pass;
- c) exposing a plurality of shaped beam shots for the exposure pass using the set base dosage level, wherein during each shaped beam shot exposure the shaped charged particle beam remains stationary with respect to the reticle;
- and
- d) repeating b) and c) for at least one additional exposure pass,
- wherein the sum of the pluralities of shots for all of the exposure passes forms a set of desired patterns on the reticle, and wherein the base dosage levels for at least two of the exposure passes are different.
A system for fracturing or mask data preparation or proximity effect correction for use with shaped beam charged particle beam lithography comprising:
- an input device configured to receive a set of patterns to be formed on a surface;
- a computation device configured to determine a set of shaped beam shots that can be used to form the set of patterns using a plurality of exposure passes, wherein each exposure pass has a base dosage level, wherein the base dosage levels for at least two of the exposure passes are different, and wherein each shaped beam shot comprises maintaining the shaped charged particle beam at a stationary position with respect to the surface while the surface is being exposed;
- and
- an output device configured to output the determined set of shaped beam shots.
Dependencies are inferred from the claim text.