Semiconductor device resolution enhancement by etching multiple sides of a mask
AssigneeGlobalfoundries Inc.
InventorsGuoxiang Ning, Chunyu Wong, Paul Ackmann, Sarasvathi Thangaraju
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Abstract
A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.
Claims17
A mask comprising:
- a plurality of first phase shift regions disposed on a first side of the mask;
- and
- a plurality of second phase shift regions disposed on a second side of the mask, wherein each second phase shift region of the plurality of second phase shift regions is centered in alignment with a respective gap between opaque regions disposed on the first side of the mask, the gap and opaque regions separating adjacent first phase shift regions of the plurality of first phase shift regions.
A method comprising:
- forming a plurality of first phase shift regions disposed on a first side of a mask;
- and
- forming a plurality of second phase shift regions disposed on a second side of the mask, wherein each second phase shift region of the plurality of second phase shift regions is centered in alignment with a respective gap between opaque regions disposed on the first side of the mask, the gap and opaque regions separating adjacent first phase shift regions of the plurality of first phase shift regions.
Dependencies are inferred from the claim text.