Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device

A manufacturing method of a crystalline semiconductor film comprising the steps of:

• supplying a film formation gas into a first area through a gas introduction port provided in a first electrode;
• supplying the film formation gas into a second area from the first area through a plurality of holes in a first plate provided between the second area and the first area;
• supplying the film formation gas into a treatment room from the second area through a plurality of holes in a second plate provided between the second area and the treatment room;
• generating glow discharge plasma by supplying high frequency electricity from an electrode surface of the first electrode;
• generating crystal nuclei on a substrate provided on a second electrode facing the first electrode;
• and
• growing the crystal nuclei generated on the substrate,
• wherein the first plate comprises a first portion having no holes and a second portion having the plurality of the holes,
• wherein the first portion of the first plate is facing the gas introduction port, and
• wherein a diameter of the first portion of the first plate having no gas hole is larger than a diameter of the gas introduction port.

A manufacturing method of a semiconductor device comprising the steps of:

• forming a gate electrode over a substrate;
• forming a gate insulating layer to cover the gate electrode;
• forming a crystalline semiconductor film over the gate insulating layer;
• and
• forming a source electrode and a drain electrode over the crystalline semiconductor film,
• wherein the crystalline semiconductor film is formed by using a film formation apparatus comprises:
• a treatment room;
• an upper electrode with a gas introduction port;
• a dispersion plate with a peripheral portion with a plurality of gas holes and a center portion with no gas hole;
• a first gas diffusion area between the upper electrode and the dispersion plate;
• a shower plate with a plurality of gas holes;
• a second gas diffusion area between the dispersion plate and the shower plate;
• and
• a lower electrode in the treatment room,
• wherein the center portion of the dispersion plate faces the gas introduction port,
• wherein a diameter of the center portion of the dispersion plate with no gas hole is larger than a diameter of the gas introduction port, and
• wherein the lower electrode faces the upper electrode with the dispersion plate, the first gas diffusion area, the second gas diffusion area and the shower plate interposed therebetween, and
• wherein the method for forming the crystalline semiconductor film using the film formation apparatus comprises the steps of:
• supplying a film formation gas into the treatment room from the gas introduction port through the first gas diffusion area, the plurality of gas holes of the dispersion plate, the second gas diffusion area, and the plurality of gas holes of the shower plate;
• setting pressure of the treatment room at greater than or equal to 2000 Pa and less than or equal to 100000 Pa by introducing the film formation gas;
• generating glow discharge plasma by supplying high-frequency power with uniform electric field intensity from a surface of the upper electrode and generating an electric field in the treatment room;
• generating crystal nuclei on the substrate provided on the lower electrode;
• and
• growing the crystal nuclei generated on the substrate.