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US 8,894,876 B2Granted
Etchant for electrode and method of fabricating thin film transistor array panel using the same
AssigneesSamsung Display Co., Ltd., Soulbrain Co., Ltd.
InventorsByeong-Jin Lee, Hong-Sick Park, Tai-Hyung Rhee, Yong-Sung Song, Choung-Woo Park, Jong-Hyun Oh
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Abstract
The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.
Claims8
A metal wiring etchant composition, the etchant comprising:
- hydrogen peroxide at about 6 wt % to about 12 wt %;
- an oxidant at about 1 wt % to about 2 wt %;
- a fluoride-based compound at about 0.2 wt% to about 0.7 wt %;
- a nitrate-based compound at about 0.5 wt% to about 3 wt %;
- wherein the nitrate-based compound comprises nitric acid, potassium nitrate, ammonium nitrate, sodium nitrate, or a combination comprising at least one of the foregoing
- and a boron-based compound at about 0.05 wt % to about 1 wt %;
- wherein the boron-based compound comprises boric acid, borate, boron oxide, borazole, or a combination comprising at least one of the foregoing;
- and
- wherein the metal wiring comprises at least one of a copper layer, a copper alloy layer, a titanium layer, a titanium alloy layer, a molybdenum layer, a molybdenum alloy layer, and a multilayer thereof, and wherein when the metal wiring comprises the multilayer, the metal layer comprises a first layer including copper and a second layer comprising at least one of titanium or molybdenum.
6 more elements
Dependencies are inferred from the claim text.