Lithography method using tilted evaporation
AssigneeKorea Research Institute of Bioscience and Biotechnology
InventorsYong Beom Shin, Seung Woo Lee
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Abstract
The present invention relates to a lithography method using tilted evaporation, and includes: (1) coating a resist on top of a substrate; (2) patterning the resist using a lithography process; (3) tilt-evaporating a first thin film material on an upper layer of the patterned resist to form a modified pattern mask; (4) evaporating a second thin film material on the top of the substrate with the modified pattern mask; and (5) removing the resist coated on the top of the substrate.
Claims18
A lithography method using tilted evaporation, comprising:
- (a) applying a resist on top of a substrate;
- (b) patterning the resist using a lithography process thus forming a patterned resist and portions on the top of the substrate where the resist is removed;
- (c) tilt-evaporating a first thin film material on an upper layer of the patterned resist thus forming a modified pattern mask;
- (d) evaporating a second thin film material on the top of the substrate using the modified pattern mask;
- (e) tilt-evaporating the material of the first thin film on an upper layer of the second thin film material evaporated on the resist thus forming a re-modified pattern mask;
- (f) etching the second thin film material evaporated on the top of the substrate using the re-modified pattern mask;
- and
- (g) removing the resist from the top of the substrate.
A lithography method using tilted evaporation, comprising:
- (a) evaporating a second thin film material on top of a substrate and applying a resist on top of the second thin film material;
- (b) patterning the resist using a lithography process thus forming a patterned resist;
- (c) tilt-evaporating a first thin film material on an upper layer of the patterned resist thus forming a modified pattern mask;
- (d) etching the material of the second thin film evaporated on the top of the substrate using the modified pattern mask;
- (e) tilt-evaporating the material of the first thin film on an upper layer of the first thin film material thus forming a re-modified pattern mask;
- (f) evaporating the material of the second thin film on the top of the substrate using the re-modified pattern mask;
- and
- (g) removing the resist from the top of the substrate.
Dependencies are inferred from the claim text.