Composition and method to remove excess material during manufacturing of semiconductor devices
AssigneeIntermolecular, Inc.
InventorAnh Duong
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Abstract
A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.
Claims20
A method for removing platinum residues during semiconductor processing and manufacturing, said method comprising:
- providing a substrate;
- applying a metal chelator mixture to said substrate,
- said metal chelator mixture comprising a metal chelator and a solvent,
- wherein the metal chelator comprises a carboxylic acid group,
- wherein said metal chelator selectively binds to said platinum residues thereby rendering said platinum residues bound to the metal chelator soluble in the metal chelator mixture;
- and
- rinsing said metal chelator mixture to selectively remove said platinum residues from said substrate.
A method for removing platinum residues, said method comprising:
- providing a platinum residue, a silicide, a nitride, and nickel-platinum on a device;
- applying a metal chelator mixture to said device,
- said metal chelator mixture comprising a metal chelator and a solvent,
- wherein the metal chelator comprises a carboxylic acid group;
- wherein said metal chelator selectively binds to said platinum residue, thereby rendering said platinum residue bound to the metal chelator soluble in the metal chelator mixture;
- and
- removing said platinum residue by rinsing said device.
Dependencies are inferred from the claim text.