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US 8,894,723 B2Granted
Formation of a lithium comprising structure on a substrate by ALD
AssigneeUniversitetet I Oslo
InventorsOla Nilsen, Helmer Fjellvåg, Mari Endresen Alnes, Titta Aaltonen, Matti Putkonen
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Abstract
A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
Claims23
A method for formation of a Li-comprising layer on a substrate by atomic layer deposition comprising the following steps:
- a) providing a substrate in a reaction chamber wherein said reaction chamber is arranged for gas-to-surface reactions,
- b) pulsing a lithium precursor through said reaction chamber,
- c) reacting said lithium precursor with at least one surface of said substrate,
- d) purging of said reaction chamber
- d1) by sending a purge gas through said reaction chamber for the purging of the reaction chamber or
- d2) by evacuating said chamber, and
- repeating steps b) to d) a desired number of times in order for the formation of a thin film layer of a lithium comprising material upon said at least one surface of said substrate,
- wherein the lithium precursor is selected from among lithium 2,2,6,6-tetramethylheptane-3,5-dionate, lithium alkoxides, lithium alkyls, cyclic lithium compounds, lithium dicyclohexamide, and bimetallic or multimetallic compounds.
5 more elements
A method for formation of a Li-comprising layer on a substrate by atomic layer deposition comprising the following steps:
- a) providing a substrate in a reaction chamber wherein said reaction chamber is arranged for gas-to-surface reactions,
- b) pulsing a lanthanum precursor through said reaction chamber,
- c) reacting said lanthanum precursor with said at least one surface of said substrate,
- d) purging of said reaction chamber,
- e) pulsing an oxygen precursor through said reaction chamber,
- f) reacting said oxygen precursor with said at least one surface of said substrate,
- g) purging of said reaction chamber,
- h) pulsing a lithium precursor through said reaction chamber,
- i) reacting said lithium precursor with a surface layer of the substrate,
- j) purging of said reaction chamber,
- k) pulsing an oxygen precursor through said reaction chamber,
- l) reacting said oxygen precursor with said at least one surface of said substrate,
- m) purging of said reaction chamber,
- n) repeating steps b) to m) a desired number of times in order for the formation of a thin film layer of a lithium and lanthanum comprising material upon said at least one surface of said substrate,
- where the purging of said chamber may be performed by sending a purge gas through said reaction chamber for the purging of the reaction chamber or by evacuating said chamber.
12 more elements
A method for formation of a Li-comprising layer on a substrate by atomic layer deposition comprising the following steps:
- a) providing a substrate in a reaction chamber wherein said reaction chamber is arranged for gas-to-surface reactions,
- b) pulsing a lanthanum precursor through said reaction chamber,
- c) reacting said lanthanum precursor with said at least one surface of said substrate,
- d) purging of said reaction chamber,
- e) pulsing an oxygen precursor through said reaction chamber,
- f) reacting said oxygen precursor with said at least one surface of said substrate,
- g) purging of said reaction chamber,
- h) pulsing a lithium precursor through said reaction chamber,
- i) reacting said lithium precursor with a surface layer of the substrate,
- j) purging of said reaction chamber,
- k) pulsing an oxygen precursor through said reaction chamber,
- l) reacting said oxygen precursor with said at least one surface of said substrate,
- m) purging of said reaction chamber,
- n) pulsing a titanium precursor through said reaction chamber,
- o) reacting said titanium precursor with said at least one surface of said substrate,
- p) purging of said reaction chamber,
- q) pulsing an oxygen precursor through said reaction chamber,
- r) reacting said oxygen precursor with said at least one surface of said substrate,
- s) purging of said reaction chamber,
- t) repeating steps b) to s) a desired number of times in order for the formation of a thin film layer of a lithium, lanthanum and titanium comprising material upon said at least one surface of said substrate,
- where the purging of said chamber may be performed by sending a purge gas through said reaction chamber for the purging of the reaction chamber or by evacuating said chamber.
18 more elements
Dependencies are inferred from the claim text.