Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
AssigneeAurrion, Inc.
InventorsJonathan E. Roth, Jae Shin, Gregory A. Fish
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance. Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).
Claims18
An apparatus comprising:
- a non-silicon slab;
- a silicon semiconductor slab, having a first silicon region, and a second silicon region for exchanging light with the non-silicon slab;
- and
- a cladding layer disposed between the non-silicon slab and the silicon semiconductor slab;
- wherein a maximum height of the first silicon region is separated from the non-silicon slab by a first distance, and a maximum height of the second silicon region is separated from the non-silicon slab by a second distance greater than the first distance.
A system comprising:
- a non-silicon region;
- a first and a second silicon waveguide disposed below the non-silicon waveguide, the first and the second silicon waveguide separated from the non-silicon region by a first and a second separation distance, respectively, the first and the second separation distances to have different values;
- and
- a cladding layer disposed between the non-silicon region and the silicon waveguides.
Dependencies are inferred from the claim text.