# US 8,890,095 B2 · Reliability in a maskless lithography system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,890,095 B2 - Document ID: US8890095B2 - Status: Granted - Kind: B2 - Application number: 11/492,572 - Filed: 2006-07-24 - Published: 2007-02-08 - Granted: 2014-11-18 - Earliest claimed: 2005-07-25 - Assignees: Mapper Lithography IP B.V. - Applicants: Stijn Willem Herman Karel Steenbrink; Pieter Kruit; Marco Jan-Jaco Wieland - Inventors: Stijn Willem Herman Karel Steenbrink; Pieter Kruit; Marco Jan-Jaco Wieland - Web page: https://patentgrep.com/patent/US8890095B2 ## CPC - H01J 37/3177: {Multi-beam, e.g. fly's eye, comb probe} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 40/00: Manufacture or treatment of nanostructures - G03F 7/70291: {Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices} - G03F 7/70425: {Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning} - H01J 2237/31757: hybrid, i.e. charged particles and light, X-rays, plasma - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A maskless lithography system for transferring a pattern onto a surface of a target. At least one beamlet optical unit generates a plurality of beamlets. At least one measuring unit measures properties of each beamlet. At least one control unit generates and delivers pattern data to the beamlet optical unit. The control unit is operationally coupled to the measuring unit for identifying invalid beamlets which have a measured property value outside a predefined range of values for the property. At least one actuator induces a shift of the beamlet optical unit and the target with respect to one another. The actuator is operationally coupled with the control unit. The control unit determines the shift, positioning valid beamlets at the position of the invalid beamlets, thus replacing the invalid beamlets with valid beamlets. ## Claims ### Claim 1 A method for transferring a pattern onto a surface of a target using a maskless multi-beamlet lithography system, comprising the steps of: generating a plurality of beamlets; measuring a property of each beamlet; determining those beamlets of said plurality of beamlets which have a value for the property outside a predefined range of values for said property as invalid beamlets, and those beamlets of said plurality of beamlets which have a value for the property inside the predefined range of values for said property as valid beamlets; switching off or permanently blanking said invalid beamlets, thus preventing invalid beamlets from reaching said surface; during a first scan of a first row, moving the target with respect to the rest of the system along the first row in a scanning direction (S1) and, during said movement, writing said pattern onto said surface by using said valid beamlets of said plurality of beamlets, wherein a part of said pattern at positions of said invalid beamlets is not correctly written; subsequently shifting said surface and at least part of said lithography system with respect to one another, wherein the magnitude of said shift is such that each invalid beamlet is replaced by a replacement beamlet, wherein said replacement beamlet is one of said valid beamlets of said plurality of beamlets, wherein said shift being performed in a shifting direction (S2) substantially transverse to said scanning direction (S1) over a distance, such that the positions that were covered by invalid beamlets are in a second scan covered by replacement beamlets; during the second scan of said first row, moving the target with respect to the rest of the system along said first row of said first scan, and, during said movement, original, unmodified pattern data of said invalid beamlets for said first scan is used for controlling said replacement beamlets during said second scan; and alter said second scan displacing said target for allowing a next row to be scanned. ### Claim 2 (depends on 1) The method for transferring a pattern onto a surface of a target according to claim 1, further comprising the step of: providing a controller with pattern data: storing information for identifying said invalid beamlets; separately modulating each beamlet in dependence of said pattern data by means of a modulator which is controlled by said controller. ### Claim 3 (depends on 2) The method for transferring a pattern onto a surface of a target according to claim 2, wherein for the second scan the controller re-transmits the original, unmodified pattern data of said invalid beamlets for said first scan to the modulator to control said replacement beamlets. ### Claim 4 (depends on 2) The method for transferring a pattern onto a surface of a target according to claim 2, wherein the shift of said beamlet optical unit and said target with respect to one another in a shifting direction (S2) transverse to said scanning direction (S1) is induced by an actuator, wherein said actuator is operationally coupled with said control unit and is adapted for inducing said shift, thereby positioning valid beamlets over the position of invalid beamlets. ### Claim 5 (depends on 4) The method for transferring a pattern onto a surface of a target according to claim 4, wherein the actuator is a stage which is used to displace the target with respect to an electron optical unit of said lithography system. ### Claim 6 (depends on 4) The method for transferring a pattern onto a surface of a target according to claim 4, wherein the beamlets are regularly spaced and wherein said actuator is adapted for mutually displacing or shifting an integer times the mutual distance of two neighbouring beamlets. ### Claim 7 (depends on 6) The method for transferring a pattern onto a surface of a target according to claim 6, wherein the lithography system has computing means for finding neighbouring invalid beamlets, determining the maximum number of adjacent invalid beamlets, and calculating the integer number for shilling an integer times the mutual distance of two neighbouring beamlets. ### Claim 8 (depends on 4) The method for transferring a pattern onto a surface of a target according to claim 4, wherein at least part of said beamlets are regularly spaced and arranged along a line (s) which is at a small angle α with respect to the scanning direction (S1), and wherein said actuator is adapted for inducing said shift in said shifting direction (S2) which shill has a distance which is an integer times d*sin(α), wherein d is a mutual distance between two adjacent beamlets. ### Claim 9 (depends on 8) The method for transferring a pattern onto a surface of a target according to claim 8, wherein the lithography system has computing means for finding neighbouring invalid beamlets, determining the maximum number or adjacent invalid beamlets, and calculating the integer number for shifting an integer times d*sin(α), wherein d is a mutual distance between two adjacent beamlets. ### Claim 10 (depends on 1) The method for transferring a pattern onto a surface of a target according to claim 1, wherein the number of beamlets generated for transferring a pattern is less than the number of beamlets that can be generated within the lithographic system. ### Claim 11 A maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target, comprising: at least one beamlet optical unit for generating a plurality of beamlets; at least one measuring unit for measuring a property of each beamlet; at least one control unit operationally coupled to said measuring unit for determining those beamlets of said plurality of beamlets which have a value for the property outside a predefined range of values for said property as invalid beamlets, and those beamlets of said plurality of beamlets which have a value for the property inside the predefined range of values for said property as valid beamlets wherein the control unit is arranged for switching off or permanently blanking said invalid beamlets, thus preventing invalid beamlets from reaching said surface; at least a stage for during a first and a second scan of a first row, moving the target with respect to the rest of the system along the first row in a scanning direction (S1); and at least one actuator for inducing a shift of said surface and at least part of said lithography system with respect to one another, wherein said shift being performed in a shifting direction (S2) substantially transverse to said scanning direction (S1) over a distance, such that the positions that were covered by invalid beamlets are in a second scan covered by replacement beamlets wherein said control unit is arranged for: during a first scan of a first row, moving the target with respect to the rest of the system along the first row in a scanning direction (S1) and, during said movement, writing said pattern onto said surface by using said valid beamlets of said plurality of beamlets, wherein a part of said pattern at positions of said invalid beamlets is not correctly written; subsequently shifting said surface and at least part of said lithography system with respect to one another, wherein the magnitude of said shift is such that each invalid beamlet is replaced by a replacement beamlet, wherein said replacement beamlet is one of said valid beamlets of said plurality of beamlets, wherein said shift being performed in a shifting direction (S2) substantially transverse to said scanning direction (S1) over a distance, such that the positions that were covered by invalid beamlets are in a second scan covered by replacement beamlets; during the second scan of said first row, moving the target with respect to the rest of the system along said first row of said first scan, and, during said movement, original, unmodified pattern data of said invalid beamlets for said first scan is used for controlling said replacement beamlets during said second scan. ### Claim 12 (depends on 11) The maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target according to claim 11, wherein for the second scan the controller re-transmits the original, unmodified pattern data of said invalid beamlets for said first scan to a modulator to control said replacement beamlets. ### Claim 13 (depends on 11) The maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target according to claim 11, wherein the stage which is used to displace the target with respect to an electron optical unit of said lithography system comprises said actuator. ### Claim 14 (depends on 11) The maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target according to claim 11, wherein the beamlets are regularly spaced and wherein said actuator is adapted for mutually displacing or shifting an integer times the mutual distance of two neighbouring beamlets. ### Claim 15 (depends on 14) The maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target according to claim 14, wherein the lithography system has computing means for finding neighbouring invalid beamlets, determining the maximum number of adjacent invalid beamlets, and calculating the integer number for shifting an integer times the mutual distance of two neighbouring beamlets. ### Claim 16 (depends on 11) The maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target according to claim 11, wherein at least part of said beamlets are regularly spaced and arranged along a line (s) which is at a small angle α with respect to the scanning direction (S1), and wherein said actuator is adapted for inducing said shift in said shifting direction (S2) which shift has a distance which is an integer times d*sin(α), wherein d is a mutual distance between two adjacent beamlets. ### Claim 17 (depends on 16) The maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target according to claim 16, wherein the lithography system has computing means for finding neighbouring invalid beamlets, determining the maximum number of adjacent invalid beamlets, and calculating the integer number for shifting an integer times d*sin(α), wherein d is a mutual distance between two adjacent beamlets. ### Claim 18 (depends on 11) The maskless multi-beamlet lithography system for transferring a pattern onto a surface of a target according to claim 11, wherein the number of beamlets generated for transferring a pattern is less than the number of beamlets that can be generated within the lithographic system.