Susceptor support portion and epitaxial growth apparatus including susceptor support portion
AssigneeApplied Materials, Inc.
InventorsAkira Okabe, Yoshinobu Mori
Life of this patent
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AssigneeApplied Materials, Inc.
InventorsAkira Okabe, Yoshinobu Mori
Estimating the term…
A susceptor support portion of the present invention includes a susceptor shaft and a substrate lift portion. The susceptor shaft includes a support column and a plurality of arms that extend radially from the support column, the substrate lift portion includes a support column and a plurality of arms that extend radially from the support column, the arm of the susceptor shaft includes a first arm, a second arm coupled to the first arm, and a third arm coupled to the second arm, from the support column side of the susceptor shaft, the second arm being provided with a through hole which passes through the second arm in a vertical direction, and a width of the first arm of the susceptor shaft is smaller than a width of the second arm of the susceptor shaft.
A susceptor support portion supporting a susceptor from below, within an epitaxial growth apparatus that forms an epitaxial film on a surface of a semiconductor wafer placed on the susceptor having a through hole, the susceptor support portion comprising:
An epitaxial growth apparatus forming an epitaxial film on a surface of a semiconductor wafer placed on a susceptor having a through hole, comprising:
Dependencies are inferred from the claim text.