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US 8,885,398 B2Granted
Spin current generator for STT-MRAM or other spintronics applications
AssigneeMicron Technology, Inc.
InventorsJun Liu, Gurtej Sandhu
Life of this patent
Estimating the term…
Abstract
Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
Claims24
A device, comprising:
- an array of memory cells;
- a spin current generator configured to generate a unidirectional spin programming current through at least one of the memory cells.
A device, comprising:
- a structure configured to generate a unidirectional spin programming current to each of an array of memory cells and generate a unidirectional non-spin polarized programming current to each of the array of memory cells;
- and
- a gate configured to selectively apply a voltage to the structure.
A device comprising:
- a structure comprising a spin-polarizing layer and a material that decreases or eliminates a spin polarization of the spin-polarizing layer, wherein the structure is configured to generate a unidirectional spin programming current to an array of memory cells, and the structure is configured to generate a unidirectional non-spin polarized programming current to the array of memory cells.
Dependencies are inferred from the claim text.