Vertical NAND and method of making thereof using sequential stack etching and landing pad

A vertical NAND string device, comprising:

• a semiconductor channel, wherein at least one end portion of the semiconductor channel extends substantially perpendicular to a major surface of a substrate;
• at least one semiconductor or electrically conductive landing pad embedded in the semiconductor channel;
• a tunnel dielectric located adjacent to the semiconductor channel;
• a charge storage region located adjacent to the tunnel dielectric;
• a blocking dielectric located adjacent to the charge storage region;
• and
• a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate, wherein the plurality of control gate electrodes comprise at least a first control gate electrode located in a first device level and a second control gate electrode located in a second device level located over the major surface of the substrate and below the first device level,
• wherein the landing pad has a larger width than a widest portion of the channel, the tunnel dielectric, the charge storage region and the blocking dielectric.