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US 8,883,947 B2Granted
Method of forming thin film
AssigneeDaikin Industries, Ltd.
InventorsTakayuki Araki, Tetsuhiro Kodani
Life of this patent
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Abstract
A vinylidene fluoride homopolymer represented by the formula (4): CF3-(A1)-I (4) wherein A1 represents a structural unit of vinylidene fluoride homopolymer which includes crystal form I alone or as main component and has a number average degree of polymerization of 5 to 12.
Claims1
A vinylidene fluoride homopolymer represented by the formula (4):
- CF3-(A1)-I (4)
- wherein A1 represents a structural unit of vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and has a number average degree of polymerization of 5 to 12,
- wherein the vinylidene fluoride homopolymer comprises crystal form I alone or as main component and when attention is given to proportions of the respective vinylidene fluoride homopolymers having crystal form I, II or III which are calculated by IR analysis, the proportion of vinylidene fluoride homopolymers having crystal form I satisfies both of (Equation 3):
- 100≧I-form/(I-form+II-form)≧70% by weight (Equation 3)
- and (Equation 4):
- 100≧I-form/(I-form+III-form)≧70% by weight (Equation 4).
3 more elements
Dependencies are inferred from the claim text.