Graphene and power storage device, and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroatsu Todoriki, Yumiko Saito, Takahiro Kawakami, Kuniharu Nomoto, Mikio Yukawa
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroatsu Todoriki, Yumiko Saito, Takahiro Kawakami, Kuniharu Nomoto, Mikio Yukawa
Estimating the term…
The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
A method for forming an electrode material, comprising:
A method for manufacturing an electrode, comprising:
Dependencies are inferred from the claim text.