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AssigneeASM America, Inc.
InventorsEric Shero, Petri I. Raisanen, Sung Hoon Jung, Chang-Gong Wang
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Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising:
A method comprising depositing a metal oxide in any film stack using a metal halide precursor and an oxidant comprising ozone and excited nitrogen-oxygen species;
A method for depositing a film on a substrate comprising controlling uniformity of deposition of the deposited film by monitoring active nitrogen-oxygen species using a sensor prior to introducing the active nitrogen-oxygen species to a reaction chamber and adjusting an amount of the active nitrogen-oxygen species provided to the reaction chamber based on the monitoring.
Dependencies are inferred from the claim text.