Method for forming pattern

A method for forming a pattern comprising the steps in the following order of:

• providing a composition to form a resist underlayer film on an upper face side of a substrate to be processed, the composition containing a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound,
• —O—R1 (i)
• wherein R1 represents a group that generates an acidic functional group by an action of heat or an acid;
• forming a resist pattern on an upper face side of the resist underlayer film;
• etching the resist underlayer film and the substrate using the resist pattern as a mask to form the pattern on the substrate;
• and
• removing the etched resist underlayer film from the substrate with a basic solution,
• the method further comprising heating an entirety of the resist underlayer film when R1 represents a group that generates an acidic functional group by an action of heat, or generating an acid in an entirety of the resist underlayer film when R1 represents a group that generates an acidic functional group by an action of an acid, so that the acidic functional group is generated prior to removing the etched resist underlayer film.