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US 8,878,157 B2Granted
Semiconductor-graphene hybrids formed using solution growth
AssigneeUniversity of Kansas
InventorsJudy Wu, Jianwei Liu
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AssigneeUniversity of Kansas
InventorsJudy Wu, Jianwei Liu
Estimating the term…
A novel method for fabrication of hybrid semiconductor-graphene nanostructures in large scale by floating graphene sheets on the surface of a solution is provided. Using this approach, crystalline ZnO nano/micro-rod bundles on graphene fabricated using chemical vapor deposition were prepared. UV detectors fabricated using the as-prepared hybrid ZnO-graphene nano-structure with graphene being one of the two electrodes show high sensitivity to ultraviolet light, suggesting the graphene remained intact during the ZnO growth. This growth process provides a low-cost and robust scheme for large-scale fabrication of semiconductor nanostructures on graphene and may be applied for synthesis of a variety of hybrid semiconductor-graphene nano-structures demanded for optoelectronic applications including photovoltaics, photodetection, and photocatalysis.
A seedless method for forming a semiconductor-graphene hybrid:
A seedless method for forming a semiconductor-graphene hybrid:
A seedless method for forming a semiconductor-graphene hybrid:
A semiconductor-graphene hybrid prepared by the method comprising:
A seedless method for forming a semiconductor-graphene hybrid comprising exposing a supported graphene sheet to an aqueous basic solution comprising transition metal ions at a temperature below 100° C. and under ambient pressure for a time to provide a semiconductor comprising an oxide of the transition metal ions grown on said graphene sheet, and wherein said exposing occurs without seeding said graphene sheet.
Dependencies are inferred from the claim text.