Atomic layer deposition using radicals of gas mixture
AssigneeVeeco ALD Inc.
InventorSang In Lee
Life of this patent
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Abstract
Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
Claims9
A method of depositing a layer of material on a substrate, comprising:
- injecting a source precursor onto a substrate;
- injecting a mixture of NH3 gas and N2O gas into a radical reactor, a ratio of N2O and NH3 in the mixture being 70:30 to 90:10;
- generating radicals of the mixture in the radical reactor;
- and
- injecting the generated radicals onto the substrate, the generated radicals reacting with source precursor molecules or replacing the source precursor molecules to deposit a layer of material on the substrate.
A method of depositing a layer of material on a substrate, comprising:
- injecting a source precursor onto a substrate;
- injecting a mixture of NH3 gas and CH4 gas into a radical reactor wherein more than half of the mixture is NH3 gas;
- generating radicals of the mixture in the radical reactor;
- and
- injecting the generated radicals onto the substrate, the generated radicals reacting with source precursor molecules or replacing the source precursor molecules to deposit a layer of material on the substrate.
Dependencies are inferred from the claim text.