Highly dielectric film
AssigneeDaikin Industries, Ltd.
InventorsMeiten Koh, Kouji Yokotani, Miharu Matsumura
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Abstract
There is provided a highly dielectric film which has high dielectric property, can be formed into a think film and is excellent in winding property (flexibility). The highly dielectric film comprises (A) a vinylidene fluoride polymer, (B) barium titanate oxide particles and/or lead zirconium titanate oxide particles, and (C) an affinity improving agent, wherein the barium titanate oxide particles and/or lead zirconium titanate oxide particles (B) and the affinity improving agent (C) are contained in amounts of 10 to 500 parts by mass and 0.01 to 30 parts by mass, respectively based on 100 parts by mass of the vinylidene fluoride polymer (A).
Claims3
A film condenser comprising a highly dielectric film and an electrode formed on a surface of the film, the highly dielectric film comprising:
- (A) a vinylidene fluoride polymer,
- (B) barium titanate oxide particles, and
- (C) an affinity improving agent represented by the following formula:
- wherein said barium titanate oxide particles (B) and said affinity improving agent (C) are contained in amounts of 50 to 400 parts by mass and 0.01 to 20 parts by mass, respectively based on 100 parts by mass of the vinylidene fluoride polymer (A),
- wherein a thickness of the highly dielectric film is 3 μm to 9 μm, and
- the highly dielectric film is a single film separated from a substrate.
A film condenser comprising a wound body of a highly dielectric film and an electrode formed on a surface of the film, the highly dielectric film comprising:
- (A) a vinylidene fluoride polymer,
- (B) barium titanate oxide particles, and
- (C) an affinity improving agent represented by the following formula:
- wherein said barium titanate oxide particles (B) and said affinity improving agent (C) are contained in amounts of 50 to 400 parts by mass and 0.01 to 20 parts by mass, respectively based on 100 parts by mass of the vinylidene fluoride polymer (A),
- wherein a thickness of the highly dielectric film is 3 μm to 9 μm, and
- the highly dielectric film is a single film separated from a substrate.
Dependencies are inferred from the claim text.