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US 8,871,644 B2Granted
Method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYukiteru Matsui, Akifumi Gawase, Gaku Minamihaba
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Abstract
According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.
Claims20
A manufacturing method of a semiconductor device comprising:
- forming a to-be-processed film comprising a convex potion and concave potion on its surface on a semiconductor substrate via layer having a relative dielectric constant smaller than that of SiO2;
- planarizing the surface of the to-be-processed film;
- and
- etching the planarized surface of the to-be-processed film.
1 more element
Dependencies are inferred from the claim text.