Resistor film for bolometer
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsTetsuo Tsuchiya, Masami Nishikawa, Tomohiko Nakajima, Toshiya Kumagai, Takaaki Manabe
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AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsTetsuo Tsuchiya, Masami Nishikawa, Tomohiko Nakajima, Toshiya Kumagai, Takaaki Manabe
Estimating the term…
Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
A bolometer comprising a resistor film comprising vanadium oxide as a main component, wherein the vanadium oxide consists of a crystalline phase thereof and a noncrystalline phase thereof co-existing in the resistor film.
A resistor film comprising vanadium oxide as a main component, wherein the vanadium oxide consists of a crystalline phase thereof, a noncrystalline phase thereof, and a boundary layer co-existing in the resistor film, the boundary layer being a mixture of the crystalline and non-crystalline phases located between a part of the resistor film formed of the crystalline phase and a part of the resistor film formed of the non-crystalline phase, the boundary layer having a gradient in content of each of the crystalline and noncrystalline phases along a thickness of the boundary layer.
A detector film, comprising a resistor film and a substrate which supports the resistor film, the resistor film comprising vanadium oxide as a main component, wherein the vanadium oxide consists of a crystalline phase thereof and a in the resistor film, and wherein the substrate is a single crystalline or an oriented polycrystalline material selected from the group consisting of sapphire, titanium oxide, and tin oxide.
Dependencies are inferred from the claim text.