Plasma processing apparatus, electrode temperature adjustment device and electrode temperature adjustment method

An electrode temperature adjustment device that adjusts the temperature of a first electrode in a plasma processing apparatus that includes said first electrode and a second electrode disposed inside a processing chamber so as to face opposite each other and executes a specific type of processing on a substrate placed on said second electrode by applying first high-frequency power and a DC voltage to said first electrode and applying second high-frequency power with a frequency lower than the first high-frequency power to said second electrode, comprising:

• a circulating passage passing through said first electrode through which a heating medium is circulated at said first electrode;
• a heating medium temperature adjuster that adjusts the temperature of said heating medium;
• and
• a control unit that executes control for temperature adjustment for said heating medium when processing the substrate based upon a heating medium target temperature to be achieved by said heating medium to adjust the temperature of said first electrode to a predetermined temperature setting, calculated based upon, at least, the high-frequency power to be applied to the individual electrodes and the DC voltage to be applied to said first electrode, wherein:
• said control unit is configured to calculate the heating medium target temperature based upon a predetermined arithmetic operation expression for determining a temperature difference between said predetermined temperature setting for said first electrode and said heating medium target temperature;
• said predetermined arithmetic operation expression in the control unit includes a first high-frequency power-based term, a second high-frequency power-based term and a DC voltage-based term;
• and
• said DC voltage-based term is constituted with a multiplicative term in which the DC voltage and the second high-frequency power are multiplied by each other to form a product HV×B, where B is the second high-frequency power applied to the second electrode to which the DC voltage is not applied and HV is the DC voltage which is equal to or higher than 500 V and is applied to the first electrode.

An electrode temperature adjustment method for adjusting the temperature of a first electrode in a plasma processing apparatus that includes said first electrode and a second electrode disposed inside a processing chamber so as to face opposite each other and executes a specific type of processing on a substrate placed on said second electrode by applying first high-frequency power and a DC voltage to said first electrode and applying second high-frequency power with a frequency lower than the first high-frequency power to said second electrode, comprising:

• a step executed before processing the substrate, in which a heating medium target temperature that must be achieved by a heating medium to adjust the temperature of said first electrode to a predetermined temperature setting is calculated based upon, at least, the high-frequency power to be applied to the individual electrodes and the DC voltage to be applied to said first electrode;
• and
• a step executed when processing the substrate, in which control is executed to hold the temperature of said first electrode at the predetermined temperature setting by circulating said heating medium the temperature of which is adjusted based upon the heating medium target temperature through a circulating passage formed inside said first electrode, wherein:
• said heating medium target temperature is calculated based upon a predetermined arithmetic operation expression for determining a temperature difference between said predetermined temperature setting for said first electrode and said heating medium target temperature;
• said predetermined arithmetic operation expression includes a first high-frequency power-based term, a second high-frequency power-based term and a DC voltage-based term;
• and
• said DC voltage-based term is constituted with a multiplicative term in which the DC voltage and the second high-frequency power are multiplied by each other to form a product HV×B, where B is the second high-frequency power applied to the second electrode to which the DC voltage is not applied and HV is the DC voltage which is equal to or higher than 500 V and is applied to the first electrode.

A plasma processing apparatus, comprising:

• an evacuatable processing chamber in which a processing target substrate is placed;
• a first electrode disposed inside said processing chamber;
• a second electrode disposed to face opposite said first electrode and supports the substrate;
• a first high-frequency power source that applies first high-frequency power to said first electrode;
• a second high-frequency power source that applies second high-frequency power with a frequency lower than the first high-frequency power to said second electrode;
• a DC power source that applies a DC voltage to said first electrode;
• a processing gas supply means for supplying a specific processing gas into said processing chamber;
• a temperature adjustment device that adjusts the temperature of said first electrode by circulating a heating medium with the temperature thereof adjusted to a predetermined level through a circulating passage formed in said first electrode;
• and
• a control unit that executes control for temperature adjustment for said heating medium when processing the substrate based upon a heating medium target temperature to be achieved by said heating medium to adjust the temperature of said first electrode to a predetermined temperature setting, wherein:
• the control unit is configured to calculate the heating medium target temperature based on a magnitude of the DC voltage applied to the first electrode and a magnitude of the second high-frequency power applied to the second electrode in which the DC voltage and the second high-frequency power are multiplied by each other to form a product HV×B, where B is the second high-frequency power applied to the second electrode to which the DC voltage is not applied and HV is the DC voltage which is equal to or higher than 500 V and is applied to the first electrode.