Spintronic electronic device and circuits

An energy harvesting apparatus, the apparatus comprising:

• at least one spintronic electronic device having a multilayer structure, the device comprising:
• a substrate, wherein the substrate comprises SiO2, and having disposed in succession upon the substrate;
• a bottom interface layer, wherein the bottom interface layer comprises a plurality of bottom sub-layers that are disposed in succession, and the plurality of bottom sub-layers comprises a Ta first bottom sub-layer, a CuN second bottom sub-layer, a Ta third bottom sub-layer, a CuN fourth bottom sub-layer, a Ta fifth bottom sub-layer, a Ru sixth bottom sub-layer, and a Ta seventh bottom sub-layer, and, wherein the first bottom sub-layer has a thickness of about 3 nm, the second bottom sub-layer has a thickness of about 40 nm, the third bottom sub-layer has a thickness of about 3 mm, the fourth bottom sub-layer has a thickness of about 40 nm, the fifth bottom sub-layer has a thickness of about 3 nm, the sixth bottom sub-layer has a thickness of about 10 nm, and the seventh bottom sub-layer has a thickness of about 5 nm;
• a pinned layer, wherein the pinned layer comprises a plurality of fixed sub-layers that are disposed in succession, the plurality of fixed sub-layers comprises a Pt37Mn63 first fixed sub-layer, a Co70Fe30 second fixed sub-layer, a Ru third fixed sub-layer, and a Co40Fe40B20 fourth fixed sub-layer, and the first fixed sub-layer has a thickness of about 15 nm, the second fixed sub-layer has a thickness of about 2.3 nm, the third fixed sub-layer has a thickness of about 0.85 nm, and the fourth fixed sub-layer has a thickness of about 2.4 nm;
• a tunneling barrier, wherein the tunneling barrier comprises MgO, and has a thickness of about 2.4 nm;
• a free layer, wherein the free layer comprises Co40Fe40B20 and has a thickness of about 2.4 nm;
• and
• a top interface layer, wherein the top interface layer comprises a plurality of top sub-layers that are disposed in succession away from the free layer, the plurality of top sub-layers comprise a Ta first top sub-layer, a Cu second top sub-layer, a Ru third top sub-layer, and a Ta fourth top sub-layer, and the first top sub-layer has a thickness of about 5 nm, the second top sub-layer has a thickness of about 10 nm, the third top sub-layer has a thickness of about 5 nm, and the fourth top sub-layer has a thickness of about 3 nm,
• wherein the device operates as a non-resonant magnetic tunnel junction in a large amplitude, out-of-plane magnetization precession regime having weakly current dependent, large diode volt-watt sensitivity when external microwave signals that exceed a predetermined threshold current and have a frequency that is lower than a predetermined level excite the magnetization precession;
• an antenna having two legs;
• and
• a load having two ends, wherein the device is electronically coupled in parallel to the legs of the antenna and to the ends of the load.