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US 8,852,762 B2Granted
Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
AssigneeInternational Business Machines Corporation
InventorsDavid W. Abraham, Michael C. Gaidis, Janusz J. Nowak, Daniel C. Worledge
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Abstract
A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
Claims6
A synthetic antiferromagnetic (SAF) device, comprising:
- a reference layer having a first ruthenium (Ru) layer and a second Ru layer;
- a spacer layer disposed on the reference layer;
- a storage layer disposed on the spacer layer, the storage layer including an additional Ru layer having a thickness of approximately 0 angstroms (Å) to 18 Å;
- a cap layer disposed on the storage layer;
- a cobalt iron boron (CoFeB) layer disposed on the spacer layer;
- a third Ru layer disposed on the CoFeB layer;
- and
- additional CoFeB layer disposed on the third Ru layer.
5 more elements
A synthetic antiferromagnetic (SAF) device, comprising:
- a substrate;
- a first tantalum (Ta) layer disposed on the substrate;
- a first ruthenium (Ru) layer disposed on the first Ta layer, the first Ru layer having a thickness of approximately 10 angstroms (Å);
- a cobalt iron (CoFe) layer disposed on the first Ru layer;
- a second Ru layer disposed on the CoFe layer, the second Ru layer having a thickness of approximately 21 Å;
- a first cobalt iron boron (CoFeB) layer disposed on the second Ru layer;
- a magnesium oxide (MgO) spacer layer disposed on the first CoFeB layer;
- a second CoFeB layer disposed on the MgO spacer layer;
- a third Ru layer disposed on the second CoFeB layer, the third Ru layer having a thickness of approximately 18 Å;
- a third CoFeB layer disposed on the third Ru layer;
- a cap layer disposed on the third CoFeB layer;
- a bottom contact coupled to the substrate;
- and
- a top contact coupled to the cap layer.
11 more elements
Dependencies are inferred from the claim text.