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US 8,852,698 B2Granted
Laser beam machining method, laser beam machining apparatus, and laser beam machining product
AssigneeHamamatsu Photonics K.K.
InventorKenshi Fukumitsu
Life of this patent
Estimating the term…
Abstract
It is an object to provide a laser beam machining method which can easily cut a machining target. The laser beam machining method irradiates laser light while positioning a focus point at the inside of a machining target to thereby form a treated area based on multiphoton absorption along a planned cutting line of the machining target inside the machining target and also form a minute cavity at a predetermined position corresponding to the treated area in the machining target.
Claims19
A laser beam machined product obtained by cutting a machining target by laser beam machining, comprising:
- a treated region which includes a treated area which is formed at a portion along a principal face formed by the cutting;
- and
- a minute cavity region which includes a minute cavity having an opening portion formed at a predetermined position which is located on the principal face formed by cutting,
- wherein the machining target is a semiconductor substrate, and the treated area is a molten processed area,
- wherein the distance between adjacent minute cavities is 2.00 μm to 7.00 μm, and
- wherein the molten processed area and the minute cavity are separate in the thickness direction of the semiconductor substrate.
3 more elements
A laser beam machining method comprising:
- setting a planned cutting line of a semiconductor substrate;
- and
- irradiating laser light to the semiconductor substrate while converging the light to the inside of the semiconductor substrate, thereby forming a molten processed area in the semiconductor substrate along the planned cutting line and forming a minute cavity at a predetermined position in connection with the molten processed area in the semiconductor substrate,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm, and
- wherein the molten processed area and the minute cavity are separate in the thickness direction of the semiconductor substrate.
2 more elements
A laser beam machining method comprising:
- setting a planned cutting line of a semiconductor substrate;
- and
- irradiating laser light to the semiconductor substrate while converging the light to the inside of the semiconductor substrate, thereby forming a molten processed area in the semiconductor substrate along the planned cutting line and forming a minute cavity at a predetermined position in connection with the molten processed area in the semiconductor substrate,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm and a pulse width set to 500 nsec or less, and
- wherein the molten processed area and the minute cavity are separate in the thickness direction of the semiconductor substrate.
2 more elements
A laser beam machining method comprising:
- setting a planned cutting line of a semiconductor substrate;
- and
- irradiating laser light to the semiconductor substrate while converging the light to the inside of the semiconductor substrate, thereby forming a molten processed area in the semiconductor substrate along the planned cutting line and forming a minute cavity at a predetermined position in connection with the molten processed area in the semiconductor substrate,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm, and
- wherein the molten processed area and the minute cavity are separate in the thickness direction of the semiconductor substrate.
2 more elements
A laser beam machining method comprising:
- irradiating laser light to a machining target while converging the light to the inside of the machining target, thereby forming a treated region which includes a treated area in the machining target along a planned cutting line of the machining target and forming a minute cavity region which includes a minute cavity along at least one part of the planned cutting line,
- wherein the machining target is a semiconductor substrate, and the treated area is a molten processed area,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm, and
- wherein the molten processed area and the minute cavity are separate in the thickness direction of the semiconductor substrate.
1 more element
A laser beam machining method, comprising:
- irradiating a pulse laser light to a machining target while converging the laser light to the inside of the machining target and relatively moving the laser light along a planned cutting line of the machining target, thereby forming a treated region which includes a treated area in the machining target along the planned cutting line, and thereby forming a minute cavity region which includes minute cavities separated by predetermined intervals along at least one part of the planned cutting line, and causing cracks to form on a surface of the machining target at the laser incident side;
- and
- growing the cracks, thereby cutting the machining target along the planned cutting line and forming cut surfaces having minute cavities,
- wherein the machining target is a semiconductor substrate and the treated area comprises molten processed areas,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm, and
- wherein the molten processed areas and the minute cavities are separate in the thickness direction of the semiconductor substrate.
3 more elements
A laser beam machining method, comprising:
- irradiating a pulse laser light to a machining target while converging the laser light to the inside of the machining target and relatively moving the laser light along a planned cutting line of the machining target, thereby forming a treated region which includes a treated area in the machining target along the planned cutting line, and thereby forming a minute cavity region which includes minute cavities separated by predetermined intervals along at least one part of the planned cutting line, and causing cracks to form on a surface of the machining target that is opposite to the laser incident side;
- and
- growing the cracks, thereby cutting the machining target along the planned cutting line and forming cut surfaces having minute cavities,
- wherein the machining target is a semiconductor substrate and the treated area comprises molten processed areas,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm, and
- wherein the molten processed areas and the minute cavities are separate in the thickness direction of the semiconductor substrate.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- irradiating a pulse laser light to a semiconductor substrate while converging the laser light to the inside of the semiconductor substrate and relatively moving the laser light along a planned cutting line of the semiconductor substrate, thereby forming a treated region which includes a treated area in the semiconductor substrate along the planned cutting line, and thereby forming a minute cavity region which includes minute cavities separated by predetermined intervals along at least one part of the planned cutting line, and causing cracks to form on a surface of the semiconductor substrate at the laser incident side;
- and
- growing the cracks, thereby cutting the semiconductor substrate along the planned cutting line and forming cut surfaces having minute cavities,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm, and
- wherein the treated area and the minute cavity region are separate in the thickness direction of the semiconductor substrate.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- irradiating a pulse laser light to a semiconductor substrate while converging the laser light to the inside of the semiconductor substrate and relatively moving the laser light along a planned cutting line of the semiconductor substrate, thereby forming a treated region which includes a treated area in the semiconductor substrate along the planned cutting line, and thereby forming a minute cavity region which includes minute cavities separated by predetermined intervals along at least one part of the planned cutting line, and causing cracks to form on a surface of the semiconductor substrate that is opposite to the laser incident side;
- and
- growing the cracks, thereby cutting the semiconductor substrate along the planned cutting line and forming cut surfaces having minute cavities,
- wherein the laser light is a pulse laser light with a pulse pitch set to 2.00 μm to 7.00 μm, and
- wherein the treated area and the minute cavity region are separate in the thickness direction of the semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.