Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
AssigneeInternational Business Machines Corporation
InventorsDavid W. Abraham, Michael C. Gaidis, Janusz J. Nowak, Daniel C. Worledge
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Abstract
A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
Claims6
A method for fabricating a synthetic antiferromagnetic (SAF) device, the method comprising:
- depositing a spacer layer disposed on a reference layer having a first ruthenium (Ru) layer and a second Ru layer;
- depositing a storage layer on the spacer layer, the storage layer including an additional Ru layer having a thickness of approximately 0 angstroms (Å) to 18 Å;
- depositing a cap layer on the storage layer;
- depositing a cobalt iron boron (CoFeB) layer on the spacer layer;
- depositing a third Ru layer on the CoFeB layer;
- and
- depositing an additional CoFeB layer on the third Ru layer.
A method for fabricating a synthetic antiferromagnetic (SAF) device, the method comprising:
- depositing a first tantalum (Ta) layer on a substrate;
- depositing a first ruthenium (Ru) layer on the first Ta layer, the first Ru layer having a thickness of approximately 10 angstroms (Å);
- depositing a cobalt iron (CoFe) layer on the first Ru layer;
- depositing a second Ru layer on the CoFe layer, the second Ru layer having a thickness of approximately 21 Å;
- depositing a first cobalt iron boron (CoFeB) layer on the second Ru layer;
- depositing a magnesium oxide (MgO) spacer layer on the first CoFeB layer;
- depositing a second CoFeB layer on the MgO spacer layer;
- depositing a third Ru layer on the second CoFeB layer, the third Ru layer having a thickness of approximately 18 Å;
- depositing a third CoFeB layer on the third Ru layer;
- depositing a cap layer on the third CoFeB layer;
- coupling a bottom contact to the substrate;
- and
- coupling a top contact to the cap layer.
Dependencies are inferred from the claim text.